In recent years, in order to solve the increasingly serious energy and environmental problems, people have turned their attention to the development and utilization of new energy. Among various new energy technologies, photovoltaic solar cells are undoubtedly one of the most promising directions. Among many new types of solar cells, perovskite thin-film solar cells have attracted a lot of attention from many solar energy researchers because of their high photoelectric conversion efficiency. In perovskite solar cells, in addition to the active layer material affecting the photoelectric conversion efficiency of the device, the interface layers(hole transport layer and electron transport layer) between the active layer and the electrode are also key factors. Therefore, in the current material structure of perovskite cells, the interface layer material has become an important research field. In this study, the inorganic copper thiocyanate (CuSCN) film was prepared by gas- assisted spin coating method, which was used as the hole transport layer(HTL) of perovskite solar cell to replace the traditional polymer material PEDOT:PSS. The thickness, crystallization characteristics, interface structure, annealing temperature and photoelectric conversion efficiency of the perovskite solar cell will be carefully investigated in this study. The experimental results show that cuprous thiocyanate can effectively replace PEDOT:PSS as a hole transport layer in perovskite solar cells. The cell with the best photoelectric conversion efficiency has a Jsc of 21.4 mA/cm2, a Voc of 1.0 mV, and a photoelectric conversion efficiency of 15.1%.
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