The purpose of this study is to investigate the effect of the quality of Cu2ZnSnSe4 (CZTSe) thin film with the variation at different synthesis process, selenization reaction time. To improve the quality of CZTSe thin film, this study will find the optimal synthesis method, selenization reaction time for the growth of CZTSe nanocrystals. In the non-vacuum environment, we used the Solvothermal Refluxing Method to synthesize Cu2ZnSnSe4 (CZTSe) nano-ink by using metal powder as the raw materials directly. Lastly, CZTSe thin film will be deposited on the glass substrate through the blade method. Then we placed the CZTSe thin film into an open selenization furnace which has two temperature zones, and further aerate nitrogen gas to proceed pressurize enclosure selenization process at different temperatures and time. We will attempt 550℃ and the selenium powder will be heated to provide the selenium compensation. From X-ray diffraction and Raman scattering measurements, we can observe the formation process of Cu2ZnSnSe4. After selenization, it has good crystallinity and morphology observed by SEM. And the elemental compositions are measured by EDS. And the optical properties are measured by UV–Vis absorption spectrum. According to the material properties measurements, the CZTSe thin film for 550℃ and 75 minutes selenization condition has a good crystallinity.
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