氧化鋅奈米線於染料敏化太陽能電池的應用

The Application of ZnO Nanowire for Dye-Sensitized Solor Cell

本文利用了化學氣相沈積法於玻璃基板上成長氧化鋅奈米線，作為染化敏料太陽能電池的光電極，並探討光電極的結構對光電轉換效率造成的影響。過程中分別以ITO、AZO及GZO基板成長氧化鋅奈米線。結果顯示，氧化鋅奈米結構的厚度與染料吸附量有很大的關係。隨著染料吸附量的增加，光電流及光電轉換效率均有上升的趨勢。為驗證氧化鋅奈米結構的總表面積對光電轉換效率的影響，故分別一次與二次成長氧化鋅奈米線。二次成長的氧化鋅奈米線其長度約為一次成長的2倍，而其光電轉換效率增加為一次成長的4倍左右。證明了氧化鋅奈米結構的總表面積與染料敏化太陽能電池的光電轉換效率有正相關。因氧化鋅的導電性不佳，以致於光電流過低而造成低轉換效率。為降低氧化鋅奈米結構的電阻率，並提升染料敏化太陽能電池的光電流與光電轉換效率，於ITO基板上鍍銦（In）對氧化鋅奈米線進行摻雜。結果顯示，適量的銦摻雜有助於效率的提升，但過多的銦摻雜反而會破壞氧化鋅奈米線的單晶結構，使光電轉換效率下降。

In this paper, ZnO nanowire (NW) arrays were synthesized on glass substrates by chemical vapor deposition (CVD).Such substrates were used to photo-electrode of the dye sensitized solar cells (DSSCs).The different structures of the ZnO nanowire arrays were discussed how to improve the efficiency of the DSSCs.In this paper,We used three different structures (ITO,AZO and GZO)to growth the ZnO nanowire arrays. The results revealed that the thickness of ZnO nanowire arrays were related to the adsorptive quality of Dye. And the photo-current and efficiency were improved when the adsorptive quality of Dye were increased. To prove that the efficiency were related to the total area of the ZnO nanowire arrays, the thickness and efficiency of the once growth ZnO nanowire arrays were compared with twice growth ZnO nanowire arrays. We find that twice growth ZnO nanowire arrays has better thickness and efficiency than once growth. So We deduction that better thickness of ZnO nanowire arrays has the better efficiency.The photo-current and efficiency were low because of the bad conductivity of the ZnO nanowires. To improve the conductivity of the ZnO nanowires,In has been doped in ZnO nanowires. The results revealed that appropriate In doped for the ZnO nanowires can reduce the resistivity and improve the efficiency of DSSCs. But, the crystal structure of ZnO Will be destroyed if there are much In doped.