Carrier Dynamic and Optical Properties Study of InAs Quantum Dots Capped with InGaAsSb Strain-Reducing Layer

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篇名	Carrier Dynamic and Optical Properties Study of InAs Quantum Dots Capped with InGaAsSb Strain-Reducing Layer
作者	Wei-Sheng Liu (Wei-Sheng Liu)、Ching-Min Chang (Ching-Min Chang)、Wen-Yu Qiu (Wen-Yu Qiu)、Chi Fang (Chi Fang)
英文摘要	Quantum dot (QD) laser with excited-state (ES) emission has studied for high saturation gain and modulation bandwidth, which is advantageous for optical-fiber communication laser application. However, the extension of ES emission to 1310nm is difficult be
起訖頁	91-96
關鍵詞	Antimony、Strain-reducing Layer、InGaAsSb、Quantum Dots
刊名	Journal of Science and Innovation
期數	201307 (3:3期)
出版單位	臺灣知識創新學會
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