| 中文摘要 |
儀科中心開發具原子級製程控制能力的蝕刻系統，將原子層蝕刻製程運用在先進材料上，已成功應用於5 nm Gate-All-Around MOSFETs元件選擇性蝕刻製程，提升儀器設備自製及製程研發技術層次。未來將引領產學各界克服邏輯元件微縮至10奈米以下之重要挑戰。The atomic layer etching system, as developed by TIRI, has the ability to control atomic processes, and uses the atomic layer etching process for advanced materials. It has been successfully applied to the selective etching process of 5 nm Gate-All-Around MOSFETs components, thus, improving the technical level of instruments and equipment self-fabrication, as well as process research and development. In the future, it will lead industrial and academic circles to overcome the critical challenge of miniaturizing logic components to less than 10 nm. |
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