| 中文摘要 |
本研究是利用有機金屬化學氣相沉積技術在藍寶石基板上與在350°C的低溫下成長鎵摻雜的氧化鋅（Gadoped ZnO，GZO）薄膜，GZO薄膜中的鎵含量是經由調變三甲基鎵流量由0至20 sccm來做變化。本研究中，我們詳細探討了GZO薄膜的結構、光電特性與發光性質。為了改善薄膜的光電特性，我們也藉由快速熱處理機台在氮氣環境與550°C下將GZO薄膜進行2分鐘的熱退火處理。在快速熱退火處理後，我們發現GZO薄膜的結晶品質提升。此外，從穿透光譜可以發現初鍍及退火後的GZO薄膜都具有高於90%的高穿透率（波長範圍：400－800 nm）。從光激發螢光光譜結果顯示，當GZO薄膜成長時的三甲基鎵流量高於10 sccm時，GZO薄膜內存在著混合能隙；此時GZO薄膜的結晶性也跟著增強，而且也可以發現薄膜的能隙峰有藍移的現象。另外，薄膜的能隙到寬能帶的發光強度也隨之增加。而經由快速熱退火處理後，GZO薄膜的電阻率可以有效地降低，顯示快速熱退火製程對於GZO薄膜品質的改善是有幫助的。
In this research, Ga-doped ZnO(GZO) thin fi lms were prepared on sapphire substrates at the growth temperature of 350 °C by using metalorganic chemical vapor deposition(MOCVD) . The Ga concentration of GZO fi lm can be modifi ed by increasing the TEGa fl ow rate from 0 to 20 sccm. The structural, optoelectronic and photoluminescence characteristics of GZO fi lms were analyzed in detail. To enhance these properties of GZO, these as-deposited fi lms were further treated by performing the rapid thermal annealing(RTA) process at 550 °C for 2 minutes with the N2 atmosphere. It can be found that the crystal quality of GZO fi lms was improved through the RTA process. Moreover, based on the transmittance spectra, we can observe that the as-deposited and annealed GZO fi lms both had high transparency above 90%(wavelength range: 400－800 nm) . The photoluminescence results revealed that GZO fi lms possessed a mixed bandgaps as the TEGa fl ow rate was higher than 10 sccm in the fi lm’s growth. In addition, the enhancement of crystallinity and a blueshift in bandgap peaks also appeared in these GZO fi lms. On the other hand, the intensity of the bandgap to broad band luminescence peaks was enhanced. Besides, the electrical resistivity of GZO can be decreased effi ciently via the RTA process, indicating that the RTA treatment is highly benefi cial for improving the characteristics of GZO fi lms. |
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