電沉積製備高深寬比金屬奈米線陣列之研究

High Aspect Ratio Metal Nanowire Arrays Fabricated by Electrochemical Deposition

近年來，科學家們對一維金屬奈米線陣列具有高度的興趣。這些金屬奈米線陣列有許多潛在的應用技術，例如，在奈米電子和光電元件等方面。本研究成功地利用電化學沉積 （ECD） 方式於陽極氧化鋁 （AAO） 模板中生長出高深寬比金屬銅、銀奈米線陣列。經移除陽極氧化鋁基板之後，可獲得大量直立於金層底材上之銅、銀奈米線陣列。此銅、銀奈米線陣列的直徑與長度均分別為100 nm與10 ìm。實驗結果顯示，此製程可獲得具良好方向性之銅、銀奈米線陣列直立均勻成長在大面積底材上；此奈米線經XRD 繞射分析，顯示出的晶相繞射圖可證實為多晶純銅、銀奈米線陣列。經掃描電子顯微鏡 （SEM） 觀察，陽極氧化鋁 （AAO） 模板是高秩序的，且幾乎所有的孔洞中都完全填滿了銅、銀奈米線。

Recently, scientists have been interested in properties of one-dimensionalmetal nanowire arrays. These nanowire arrays have manypotential applications in technologies, for example in nanoscale electronicand optoelectronic devices. High aspect ratios Metal (Cu, Ag) nanowirearrays were successfully prepared by electrochemical deposition (ECD)using anodized aluminum oxide (AAO) templates. These nanowire arraysstand freely on gold-coated substrates after removing the AAO template. Thediameter and length of Cu, and Ag nanowire in the arrays are about 100 nmand 10 μm, respectively. It has been shown that the well-ordered andfree-standing Cu, Ag nanowire arrays can be grown uniformly in a relativelylarge area. The X-ray diffraction pattern of Cu, Ag nanowire arrays weretaken to examine the crystal structure of the nanowires. Scanning electronmicroscope (SEM) results indicate that the pores of AAO templates arehighly uniform and almost all the pores are filled with Cu, Ag nanowire.