| 中文摘要 |
We report the growth of ZnSe/ZnCdSeTe superlattice nanotips on oxidized Si(100) substrate by molecular beam epitaxy (MBE) . It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures system. It was also found that photoluminescence intensities observed from the ZnSe/ZnCdSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnCdSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnCdSeTe superlattice nanotips with well widths of 12, 16, 20 and 24 nm were 189, 205, 292 and 240 meV, respectively. |
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